Ing. Dusan NOHAVICA, CSc.
IPE AS CR, Prague, Czech Republic, EU
Specialization: Technology of semiconductors, Nanotechnology and Nano safety
D. Nohavica (63) graduated in Technology of semiconductors at Skt. Petersburg Technical University (1967). PhD from the University of Chemical Technology of Prague (1977). His investigation was concerned the epitaxial growth from the vapor phase (GaP/GaAs, GaP/GaP, GaP/Mo, GaN/Al2O3, GaAlN/Al2O3, InP/InP, ZnO) and from the liquid phase (GaP:Zn,O/GaP, GaP:N/ GaP, GaAs:Si/GaAs, GaAlAs/GaAs, GaInAsP/InP, GaInP2/GaAs and Si/Si). These structures have been optimized for light emitting diodes in visible and infrared part of the spectra, injection lasers, secondary electron emission and photodetectors. The most important results have been related to the preparation of the DC PBH lasers throughout the spectral range 1.07 to 1.67 µm with threshold current approaching 11 mA at RT, elastically strained quantum wells, GaInP2/GaAs solar cell structures and etching studies of the InAs and GaSb , surface passivation and electrochemical anodization of the InP and InAs and micro/nano pores electrochemical etching in A3B5. In the field of nanotechnology he is one of the founders of the Czech Nanoteam. He presented lectures of the nanotechnologies for magister study in Czech Technical University, Mechanical Engineering Faculty and the Nano safety dominates in his study now. Mentioned surface treatment and etching studies have been developed in collaboration with Physics Dept. of the Lancaster University UK. The results of the research were presented in 122 conference contributions and journal papers, 16 research reports, 11 patents and two contributions to the monographs. He collaborated with Lancaster University, University of Surrey, LoffeFiz. Tech Inst , Skt. Petersburg, Kristallabor of the 4. Physikalishes Inst. Stuttgard University and Inst. für Kristallzuchtung Berlin.
Selected publications:
D. Nohavica, J. Grym, P. Gladkov, E. Hulicius, J. Pangrac and Z. Jarchovsky, Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs, Int. J. of Nanotechnology, v tisku.
Gladkov, D. Nohavica, Z. Šourek, A.P. Litvinchuk, M.N. Iliev, Growth and characterization of InAs Layers obtained by LPE from Bi solvent, Semicond. Sci. and Technol. 21, (2006), 544-549.
D. Nohavica, P. Gladkov, Z. Jarchovský, J. Zelinka, Ph. Komninou, A. Delimitis, Th. Kehagias, and Th. Karakostas, „Micropore modification in InP“, Phys. stat. sol. (a) 205, No. 11, 2577–2580 (2008),
D. Nohavica,“Respirační a kardiovaskulární problem související s nanočásticemi”, NANOCON 2009
A. Delimitis, Ph. Komninou, Th. Kehagias, E. Pavlidou, Th. Karakostas, P. Gladkov and D. Nohavica, Controlled growth of porous networks in phosphide semiconductors, J. of Porous Mater, (2008), vol.15, 75-81.
D. Nohavica, P. Gladkov and Z. Jarchovský „MOCVD growth of ZnO with different growth rate“EW-MOVPE XIII, 2009, Ulm, Germany, Proceedings p. 291-294
At the Programme Committee of the NANOCON conference he is the head of the thematic topic Protection of Health, Environment, Toxicity of nanomaterials.